在這個科技日新月異的時代，無線通訊技術的每一次革新都深刻地改變著我們的生活。今天，我們向大家介紹一款革命性的產品——KCT8570N，這是一款專為IEEE 802.11a/n/ac/ax/be WLAN系統設計的5.15-5.925GHz頻段高度集成的射頻前端集成電路。KCT8570N不僅集成了高效非線性功率放大器（PA）、帶旁路的低噪聲放大器（LNA）、相關匹配網絡和諧波濾波器，更在性能上實現了前所未有的突破，為Wi-Fi 7及未來無線通訊技術的發展奠定了堅實的基礎。
In this era of rapid technological change, every innovation in wireless communication technology has profoundly changed our lives. Today, we introduce a revolutionary product, the KCT8570N, a highly integrated RF front-end integrated circuit in the 5.15-5.925GHz band designed for IEEE 802.11a/n/ac/ax/be WLAN systems. The KCT8570N not only integrates efficient nonlinear power amplifier (PA), low noise amplifier (LNA) with bypass, correlation matching network and harmonic filter, but also achieves unprecedented breakthrough in performance, laying a solid foundation for the development of Wi-Fi 7 and future wireless communication technology.

為了進一步提升系統的穩定性和性能，KCT8570N還集成了直流電壓輸出功率檢測器和定向射頻耦合器。這兩個功能模塊的加入，使得系統能夠在運行過程中實現閉環功率控制，從而更加精準地調節輸出功率，確保信號傳輸的穩定性和一致性。這一特性對于提高無線通訊系統的整體性能和用戶體驗具有重要意義。
To further improve system stability and performance, the KCT8570N also integrates a DC voltage output power detector and directional RF coupler. The addition of these two functional modules enables the system to realize closed-loop power control during operation, so as to adjust the output power more accurately and ensure the stability and consistency of signal transmission. This feature is of great significance to improve the overall performance and user experience of wireless communication system.

在封裝設計上，KCT8570N同樣展現出了極致的緊湊與精巧。采用3x3x0.75mm的16引腳QFN封裝，KCT8570N不僅為現代電子設備節省了大量寶貴的空間，還確保了安裝的便捷性和可靠性。無論是智能手機、平板電腦等移動設備，還是路由器、基站等網絡設備，KCT8570N都能輕松融入其中，為5GHz高頻段WLAN系統的實現提供了強有力的支持。
In terms of package design, the KCT8570N also shows the ultimate compact and compact. In a 16-pin QFN package of 3x3x0.75mm, the KCT8570N not only saves a lot of valuable space for modern electronic devices, but also ensures ease and reliability of installation. Whether it is mobile devices such as smartphones and tablets, or network devices such as routers and base stations, the KCT8570N can be easily integrated into them, providing strong support for the implementation of 5GHz high-band WLAN systems.

產品規格
product standard

集成功能：KCT8570N集成了802.11be 5GHz功率放大器、帶旁路的低噪聲放大器和收發開關，全面滿足現代WLAN系統的需求。
Integrated features: The KCT8570N integrates an 802.11be 5GHz power amplifier, a low-noise amplifier with bypass, and a transceiver switch to fully meet the needs of modern WLAN systems.

輸入輸出匹配：全匹配設計確保了信號在傳輸過程中的穩定性和一致性，降低了信號損耗和干擾。
Input and output matching: The full matching design ensures the stability and consistency of the signal during transmission, and reduces the signal loss and interference.

功率檢測：內置RF和DC功率檢測器，支持系統內的閉環功率控制，提高系統性能和穩定性。
Power detection: Built-in RF and DC power detectors support closed-loop power control within the system to improve system performance and stability.

增益表現：在5V供電下，發射增益高達29.5dB，接收增益為17.0dB，噪聲系數為1.8dB，確保了出色的信號放大和接收性能。
Gain performance: Under 5V power supply, the transmit gain is up to 29.5dB, the receive gain is 17.0dB, and the noise figure is 1.8dB, ensuring excellent signal amplification and reception performance.

輸出功率：在配合DPD算法的情況下，KCT8570N在不同調制模式和MCS等級下均能表現出色的輸出功率和EVM水平。例如，在EHT160/MCS13模式下，輸出功率可達+21.5dBm，EVM為-43dB；在HE160/MCS11模式下，輸出功率可達+22.5dBm，EVM為-40dB。這些性能參數均達到了業界領先水平。
Output power: When combined with the DPD algorithm, the KCT8570N can perform excellent output power and EVM levels at different modulation modes and MCS levels. For example, in the EHT160/MCS13 mode, the output power can reach +21.5dBm and the EVM is -43dB; In HE160/MCS11 mode, the output power can reach +22.5dBm and the EVM is -40dB. These performance parameters have reached the industry-leading level.

ESD保護：所有引腳均配備了ESD保護電路，提高了設備的抗靜電干擾能力，確保了系統的穩定性和可靠性。
ESD protection: All pins are equipped with ESD protection circuit, which improves the anti-static interference ability of the equipment and ensures the stability and reliability of the system.

外部組件需求：KCT8570N的高度集成設計大大減少了外部組件的需求，降低了系統設計的復雜度和成本。
External component requirements: The highly integrated design of the KCT8570N greatly reduces the need for external components, reducing the complexity and cost of system design.

封裝尺寸：采用QFN-16L封裝，尺寸為3mm x 3mm x 0.75mm，符合JEDEC J-STD-020標準的MSL3等級，能夠在260℃下正常工作。
Package size: The QFN-16L package is 3mm x 3mm x 0.75mm, conforming to the MSL3 class of JEDEC J-STD-020 standard, and can work normally at 260 ° C.

環保合規：KCT8570N符合RoHS和REACH標準，采用無鉛設計，確保了產品的環保性和安全性。
Environmental compliance: The KCT8570N complies with RoHS and REACH standards and adopts a lead-free design to ensure the environmental protection and safety of the product.

審核編輯 黃宇