| Number of channels (#) | 4 |
| Total supply voltage (Max) (+5V=5, +/-5V=10) | 15 |
| Total supply voltage (Min) (+5V=5, +/-5V=10) | 5 |
| Rail-to-rail | In to V-, Out |
| GBW (Typ) (MHz) | 0.35 |
| Slew rate (Typ) (V/us) | 0.11 |
| Vos (offset voltage @ 25 C) (Max) (mV) | 3 |
| Iq per channel (Typ) (mA) | 0.04 |
| Vn at 1 kHz (Typ) (nV/rtHz) | 42 |
| Rating | Catalog |
| Operating temperature range (C) | -40 to 85 |
| Offset drift (Typ) (uV/C) | 1.3 |
| Input bias current (Max) (pA) | 20 |
| CMRR (Typ) (dB) | 83 |
| Output current (Typ) (mA) | 21 |
| Architecture | CMOS |
- Rail-to-rail output swing
- Micropower operation: (1 mW)
- Specified for 100 kΩ and 5 kΩ loads
- High voltage gain: 120 dB
- Low input offset voltage: 3 mV
- Low offset voltage drift: 1.3 μV/°C
- Ultra low input bias current: 2 fA
- Input common-mode includes V?
- Operation range from +5V to +15V
- Low distortion: 0.01% at 1 kHz
- Slew rate: 0.11 V/μs
- Full military temp. range available
All trademarks are the property of their respective owners.
The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltages from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kΩ and 5 kΩ) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 1 mW.
This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.
See the LPC662 datasheet for a Dual CMOS operational amplifier and LPC661 datasheet for a single CMOS operational amplifier with these same features.
