--- 產品詳情 ---
Bus voltage (Max) (V) | 100 |
Power switch | MOSFET |
Input VCC (Min) (V) | 9 |
Input VCC (Max) (V) | 14 |
Peak output current (A) | 2 |
Rise time (ns) | 10 |
Operating temperature range (C) | -40 to 125 |
Undervoltage lockout (Typ) | 8 |
Rating | Catalog |
Number of channels (#) | 2 |
Fall time (ns) | 10 |
Prop delay (ns) | 35 |
Iq (uA) | 10 |
Input threshold | TTL |
Channel input logic | TTL |
Negative voltage handling at HS pin (V) | -1 |
Driver configuration | Dual, Single |
- Drives Both a High-Side and Low-Side N-Channel MOSFET
- Adaptive Rising and Falling Edges With Programmable
Additional Delay - Single Input Control
- Bootstrap Supply Voltage Range up to 118-V DC
- Fast Turnoff Propagation Delay (25 ns Typical)
- Drives 1000-pF Loads With 15-ns Rise and Fall Times
- Supply Rail Undervoltage Lockout
- SOIC and WSON-10 4-mm × 4-mm Package
The LM5104 High-Voltage Gate Driver is designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. This device is available in the standard SOIC and the WSON packages.
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