CGHV1F025S
Package Type: 3x4 DFNPN: CGHV1F025S25 W, DC - 15 GHz, 40 V, GaN HEMTDescriptionWolfspeed’s
CGHV1F025S is an unmatched, gallium nitride (GaN) high electronmobility transistor (HEMT) designed specifically for high efficiency, high gain andwide bandwidth capabilities. The device can be deployed for L-, S-, C-, X- andKu-Band amplifier applications. The datasheet specifications are based on aX-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuitwhile housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.Under reduced power, the transistor can operate below 40V to as low as 20V VDD,maintaining high gain and efficiency.
