資料介紹
Introduction
Electronic devices are routinely tested
multiple times during the
manufacturing process, including the
wafer-level, module-level, and module
burn-in tests. Systems and materials
begin to wear out under use, and
various situations can lead to failure.?
Therefore, failures are de?? ned within
speci?? c bounds under speci?? c
tolerance limits. Early failures may
come from poor design or
improper manufacturing.
Accelerated life tests that subject
units to higher-than-usual levels of
stress such as voltage, temperature,
humidity, pressure, and loading are
used to speed up the deterioration of
materials or electronics components.
This enables analysts to collect
failure information more quickly.
About 40% of microelectronic failures
are reportedly due to temperature.
In other words, temperature is the
most critical factor for component
failure. Burn-in is a screening
technique performed by applying high
voltage and temperature at a product
life cycle’s early stage to remove
latent defects. It is used for highly
intergrated circuit systems.
Electronic devices are routinely tested
multiple times during the
manufacturing process, including the
wafer-level, module-level, and module
burn-in tests. Systems and materials
begin to wear out under use, and
various situations can lead to failure.?
Therefore, failures are de?? ned within
speci?? c bounds under speci?? c
tolerance limits. Early failures may
come from poor design or
improper manufacturing.
Accelerated life tests that subject
units to higher-than-usual levels of
stress such as voltage, temperature,
humidity, pressure, and loading are
used to speed up the deterioration of
materials or electronics components.
This enables analysts to collect
failure information more quickly.
About 40% of microelectronic failures
are reportedly due to temperature.
In other words, temperature is the
most critical factor for component
failure. Burn-in is a screening
technique performed by applying high
voltage and temperature at a product
life cycle’s early stage to remove
latent defects. It is used for highly
intergrated circuit systems.
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