如何組裝高性能氮化鎵系統

　　采用GaN FET建設高速系統并不是一件簡單的事。開關電場可以占據空間的周圍和上面的包，所以如何使用GaN FET的無線系統的系統組裝為整體性能的關鍵。本文討論了不同的封裝技術對不同應用程序的影響，以及如何將這些封裝技術用于構建高性能的GaN設備。

　　氮化鎵正迅速取代某些無線應用的技術。在雙向私人電臺、寬帶放大器和蜂窩基礎設施等領域，氮化鎵的優點是允許更小、更堅固和更可靠的系統。

　　When built on a substrate of silicon carbide （SiC）， GaN offers higher breakdown voltages than other technologies （over 100 V）， as well as electron mobility ten times that of silicon. It is this combination of being able to run at higher temperatures that supports the use in both high-voltage， power switching devices and in RF power amplifiers. With operating channel temperatures over 150°C and a higher power density of 5 to 30 W/mm， class A and AB linear amplifiers are being increasingly used for OFDM， W-CDMA， EDGE and CDMA systems. The higher frequency and power performance means that the devices can be operated at more efficient levels to achieve the same results， giving significant savings in power consumption.