200MHz高傳輸效率薄膜變壓器的設計與制備

實現了一種新型的基于硅IC 工藝的微波鐵氧體集成薄膜變壓器. 鐵氧體薄膜采用射頻磁控濺射法制備,SEM 觀察了SiO2 層上鐵氧體膜的表面形貌,表明薄膜容易開裂;能譜儀對薄膜成分的分析表明鐵氧體薄膜與SiO2 層和Al 膜附著性差. 通過濺射工藝參數及增加熱處理等工藝初步解決了以上存在的薄膜制備工藝與IC 工藝之間的兼容性問題. 采用標準硅基IC 工藝設計和制備了這種新型結構的薄膜變壓器,對一組薄膜變壓器樣品的實驗參數在20～210 MHz 的頻率范圍內作了測試. 測試結果表明:對于設計的匝數比為1 的薄膜變壓器,在90～210 MHz 的頻率范圍內能獲得最高為79 %的變壓比和良好的波形傳輸能力.

A novel microwave ferrite thin2film t ransformer based on Si IC technology was presented. RF
magnet ron sp ut tering was used to prepare ferrite t hin film on SiO2 layer . The ferrite film of surface ap2 pear s crack by observation of SEM. EDS analysis of t hin film showed t hat t hin film has poor cohesiveness to SiO2 layer or Al film. These compatible p roblems of t hin film wit h IC technology were resolved t hrough sput tering parameter s modification and heating t reatment addition. The t hin2film t ransformer was fabrica2 tedand t ransmission parameters have been measured at 20 MHz～210 MHz. Experience result s showed that t he maximal Vout and V in radio of t he t hin2film t ransformer s is approximately 79 % at 90 MHz～210MHz ,and t he t hin2film t ransformer has fine waveform t ransmission ability at 20 MHz to 210 MHz.