資料介紹
Introduction
The processing that is required to lower
the dielectric constant in a low-k ? lm
has the adverse effect of degrading the
mechanical properties of the ? lm. Low-k
? lms are subjected to many processes
that test the strength of these ? lms and
their adhesion to the substrate such
as chemical and mechanical polishing
(CMP) and wire bonding. It is important
for these materials to resist plastic
deformation during these processes
and remain intact without blistering up
from the substrate. Ideally, a dielectric
material will have a high hardness and
elastic modulus because, traditionally,
these two parameters help to de? ne
how the material will react when
subjected to manufacturing processes.
In this application note, scratch
tests are preformed on several low-k
samples using a ramp-load scratch
test. The results from scratch testing
and nanoindentation are examined
through correlation analysis to better
understand the interconnectedness
of scratch results.
The processing that is required to lower
the dielectric constant in a low-k ? lm
has the adverse effect of degrading the
mechanical properties of the ? lm. Low-k
? lms are subjected to many processes
that test the strength of these ? lms and
their adhesion to the substrate such
as chemical and mechanical polishing
(CMP) and wire bonding. It is important
for these materials to resist plastic
deformation during these processes
and remain intact without blistering up
from the substrate. Ideally, a dielectric
material will have a high hardness and
elastic modulus because, traditionally,
these two parameters help to de? ne
how the material will react when
subjected to manufacturing processes.
In this application note, scratch
tests are preformed on several low-k
samples using a ramp-load scratch
test. The results from scratch testing
and nanoindentation are examined
through correlation analysis to better
understand the interconnectedness
of scratch results.
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