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侵入保護(阻止)系統(tǒng)(IPS)是新一代的侵入檢測系統(tǒng)(IDS),可彌補IDS存在于前攝及假陽性/陰性等性質(zhì)方面的弱點。IPS能夠識別事件的侵入、關(guān)聯(lián)、沖擊、方向和適當?shù)姆治觯缓髮⒑线m的信息和命令傳送給防火墻、交換機和其它的網(wǎng)絡設備以減輕該事件的風險。
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型號 | 描述 | 數(shù)據(jù)手冊 | 參考價格 |
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IPT1206-SEA | IPT1206-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1206-CEF | IPT1206-CEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1206-CEB | IPT1206-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1206-CEA | IPT1206-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1206-BEB | IPT1206-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1206-BEA | IPT1206-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q08-CEI | IPT08Q08-CEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q08-CEF | IPT08Q08-CEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q08-CED | IPT08Q08-CED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q08-CEB | IPT08Q08-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q08-CEA | IPT08Q08-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q08-BEI | IPT08Q08-BEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q08-BEF | IPT08Q08-BEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q08-BED | IPT08Q08-BED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q08-BEB | IPT08Q08-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q08-BEA | IPT08Q08-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q06-CEI | IPT08Q06-CEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q06-CEF | IPT08Q06-CEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q06-CED | IPT08Q06-CED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q06-CEB | IPT08Q06-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q06-CEA | IPT08Q06-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
獲取價格
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IPT08Q06-BEI | IPT08Q06-BEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q06-BEF | IPT08Q06-BEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q06-BEB | IPT08Q06-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT08Q06-BEA | IPT08Q06-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0808-SEI | IPT0808-SEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0808-SEF | IPT0808-SEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0808-SED | IPT0808-SED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0808-SEA | IPT0808-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0808-CEI | IPT0808-CEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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