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侵入保護(阻止)系統(IPS)是新一代的侵入檢測系統(IDS),可彌補IDS存在于前攝及假陽性/陰性等性質方面的弱點。IPS能夠識別事件的侵入、關聯、沖擊、方向和適當的分析,然后將合適的信息和命令傳送給防火墻、交換機和其它的網絡設備以減輕該事件的風險。
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型號 | 描述 | 數據手冊 | 參考價格 |
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IPT0408-10A | IPT0408-10A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0408-05I | IPT0408-05I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0408-05D | IPT0408-05D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0408-05B | IPT0408-05B - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0408-05A | IPT0408-05A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0406-50F | IPT0406-50F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0406-35I | IPT0406-35I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0406-35D | IPT0406-35D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0406-35B | IPT0406-35B - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0406-35A | IPT0406-35A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0406-25F | IPT0406-25F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0406-18F | IPT0406-18F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0406-10I | IPT0406-10I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0406-10D | IPT0406-10D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0406-10A | IPT0406-10A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0406-05I | IPT0406-05I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0406-05D | IPT0406-05D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0406-05B | IPT0406-05B - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0406-05A | IPT0406-05A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0108-XXU | IPT0108-XXU - suitable for low power AC Switching application - IP SEMICONDUCTOR CO., LTD. |
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IPT0106-XXU | IPT0106-XXU - suitable for low power AC Switching application - IP SEMICONDUCTOR CO., LTD. |
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IPS825-40B | IPS825-40B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. |
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IPS825-40A | IPS825-40A - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. |
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IPS820-30F | IPS820-30F - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. |
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IPS820-30B | IPS820-30B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. |
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IPS816-25B | IPS816-25B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. |
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IPS812-15B | IPS812-15B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. |
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IPS812-05B | IPS812-05B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. |
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IPS808-05D | IPS808-05D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. |
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IPS625-40A | IPS625-40A - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. |
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